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  TLP504A,TLP504A ? 2 2002-09-25 1 toshiba photocoupler gaas ired & photo ? transistor TLP504A,TLP504A ? ? ? ? 2 programmable controllers ac / dc ? input module solid state relay the toshiba TLP504A and TLP504A ? 2 consists of a photo ? transistor optically coupled to a gallium arsenide infrared emitting diode. the TLP504A offers two isolated channels in a eight lead plastic dip package, while the TLP504A ? 2 provides four isolated channels in a sixteen plastic dip package.  collector ? emitter voltage: 55 v (min.)  current transfer ratio: 50% (min.) rank gb: 1 00% (min.)  isolation voltage: 2500 vrms (min.)  ul recognized: ul 1 577, file no. e67349 pin configurations (top view) 1, 4 : anode 2, 3 : cathode 5, 8 : emitter 6, 7 : collector TLP504A TLP504A-2 1 2 7 8 3 4 5 6 5 6 11 12 7 8 9 10 1 2 15 16 3 4 13 14 1, 4, 5, 8 2, 3, 6, 7 9, 12, 13, 16 10, 11, 14, 15 : anode : cathode : emitter : collector unit in mm toshiba 11 ? 10c4 weight: 0.54 g toshiba 11 ? 20a3 weight: 1.1 g
TLP504A,TLP504A ? 2 2002-09-25 2 maximum ratings (ta = 25c) rating characteristic symbol TLP504A TLP504A  2 unit forward current i f 60 50 ma forward current derating ? i f / c  0.7 (ta 39c)  0.5 (ta 25c) ma /c pulse forward current i fp 1 (100s pulse, 100pps) a reverse voltage v r 5 v led junction temperature t j 125 c collector  emitter voltage v ceo 55 v emitter  collector voltage v eco 7 v collector current i c 50 ma collector power dissipation (1 circuit) p c 150 100 mw collector power dissipation derating (1 circuit ta 25c) ? p c / c  1.5  1.0 mw /c detector junction temperature t j 125 c storage temperature range t stg  55~150 c operating temperature range t opr  55~100 c lead soldering temperature t sol 260 (10 s) c total package power dissipation r t 250 150 mw total package power dissipation derating (ta 25c) ? p t / c  2.5  1.5 mw / c isolation voltage bv s 2500 (ac, 1min., r.h. 60%) (note 1) vrms (note 1) device considered a two terminal device: led side pins shorted together and detector side pins shorted together. recommended operating conditions characteristics symbol min. typ. max. unit supply voltage v cc D  5 24 v forward current i f D 16 20 ma collector current i c D  1 10 ma operating temperature t opr  25 D  85 c
TLP504A,TLP504A ? 2 2002-09-25 3 individual electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10 ma 1.0 1.15 1.3 v reverse current i r v r = 5 v ? ? 10 a led capacitance c t v = 0, f = 1 mhz ? 30 ? pf collector  emitter breakdown voltage v (br) ceo i c = 0.5 ma 55 ? ? v emitter  collector breakdown voltage v (br) eco i e = 0.1 ma 7 ? ? v v ce = 24 v ? 10 100 na collector dark current i ceo v ce = 24 v, ta = 85c ? 2 50 a detector capacitance collector to emitter c ce v = 0, f = 1 mhz ? 10 ? pf coupled electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit 50 ? 600 current transfer ratio i c / i f i f = 5 ma, v ce = 5 v rank gb 100 ? 600 % ? 60 ? saturated ctr i c / i f (sat) if = 1 ma, v ce = 0.4 v rank gb 30 ? ? % i c = 2.4 ma, i f = 8 ma ? ? 0.4 ? 0.2 ? collector  emitter saturation voltage v ce (sat) i c = 0.2 ma, i f = 1 ma rank gb ? ? 0.4 v isolation characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit capacitance input to output c s v s = 0, f = 1 mhz ? 0.8 ? pf isolation resistance r s v s = 500 v 510 10 10 14 ? ? ac, 1 minute 2500 ? ? ac, 1 second, in oil ? 5000 ? vrms isolation voltage bv s dc, 1 minute, in oil ? 5000 ? vdc
TLP504A,TLP504A ? 2 2002-09-25 4 switching characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit rise time t r ? 2 ? fall time t f ? 3 ? turn  on time t on ? 3 ? turn  off time t off v cc = 10 v, i c = 2 ma r l = 100 ? ? 3 ? s turn  on time t on ? 2 ? storage time t s ? 15 ? turn  off time t off r l = 1.9 k ? (fig.1) v cc = 5 v, i f = 16 ma ? 25 ? s fig. 1 switching time test circuit v cc v ce i f r l i f v ce v cc t on 4.5v 0.5v t off t s
TLP504A,TLP504A ? 2 2002-09-25 5 forward voltage temperature coefficient v f / ta (mrv / ) v f / ta ? i f 0.1 -2.0 -2.4 -2.8 -0.4 0.3 -1.6 -1.2 -0.8 1 3 10 30 forward current i f (ma) i fp ? v fp pulse forward current i fp (ma) pulse forward voltage v fp (v) 1000 500 0 3 50 5 300 30 10 100 1 0.4 0.8 1.0 1.2 1.4 1.6 pulse width 10s repetitive frequency=100hz ta = 2 5 forward voltage v f (v) i f ? v f forward current i f (ma) 100 50 0.4 0.3 5 0.5 30 3 1 10 0.1 0.6 0.8 1.0 1.2 1.4 1.6 ta = 2 5 allowable pulse forward current i fp (ma) duty cycle ratio d r i fp ? d r 5000 3000 3 3 10 -3 3 10 1000 500 30 100 50 300 10 -1 10 -2 3 10 0 pulse width 100s ta = 2 5 p c ? ta allowable collector power dissipation p c (mw) ambient temperature ta ( ) 240 160 -20 0 120 80 40 120 100 80 60 20 40 0 200 tlp504 a tlp504 a -2 i f ? ta allowable forward current i f (ma) ambient temperature ta ( ) 100 80 -20 0 60 40 20 120 120 100 80 60 20 40 0 tlp504 a tlp504 a -2
TLP504A,TLP504A ? 2 2002-09-25 6 i ceo ? ta collector dark current i ceo ( a) ambient tem p erature ta ( ) 10 1 10 0 10 -1 80 60 40 20 0 100 10 -2 10 -3 120 10 -4 i c ? i f collector current i c (ma) forward current i f (ma) 0.3 100 50 10 5 0.3 0.5 0.1 3 1 1 3 10 30 100 30 0.05 0.03 ta = 25c vce = 5v vce = 0.4v sample a sample b collector-emitter voltage v ce (v) collector current i c (ma) i c ? v ce 50ma 80 10 8 4 6 0 2 60 40 20 0 ta = 2 5 20ma 15ma p c(max.) i f =5ma 30ma 10ma collector-emitter voltage v ce (v) collector current i c (ma) i c ? v ce 25 1.0 0.8 0.4 0.6 0.2 20 15 10 0 0 5 1.2 1.4 50ma 40ma 30ma 20ma 10ma 5ma i f =2ma ta = 2 5 i c / i f ? i f current transfer ratio i c / i f (%) forward current i f (ma) 5 500 300 50 30 1 0.3 10 100 10 30 100 3 ta = 25c vce = 5v vce = 0.4v sample a sample b v ce = 24v 5v 10v
TLP504A,TLP504A ? 2 2002-09-25 7 i f = 5ma i c = 1ma ambient temperature ta ( ) collector-emitter saturation voltage v ce(sat) (v) v ce (sat) ? ta 100 80 60 20 40 0 -20 0.20 0.16 0.12 0.08 0.04 0 80 60 20 40 0 -20 0.3 0.1 100 10 5 30 100 50 3 1 0.5 v ce = 5v ambient temperature ta ( ) collector current i c (ma) i c ? ta i f = 0.5ma 1ma 5ma 10ma 25ma load resistance r l (k ) r l ? switching time switching time ( s) 1 t on 1000 500 300 100 50 30 10 5 3 3 10 30 100 300 1 ta = 25c i f = 16ma v cc = 5v t s t off
TLP504A,TLP504A ? 2 2002-09-25 8  toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc..  the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk.  gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage.  the products described in this document are subject to the foreign exchange and foreign trade laws.  the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others.  the information contained herein is subject to change without notice. 000707ebc restrictions on product use


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